n-channel enhancement mode mosfet copyright ? anpec electronics corp. rev. a.1 - aug., 2003 apm4230 www.anpec.com.tw 1 anpec reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. apm4230 handling code temp. range package code package code k : s o - 8 operating junction tem p. range c : -55 to 150 c handling code tu : tube tr : tape & reel lead free code l : lead free device blank : orginal device apm4230k : - date code xxxxx apm4230 xxxxx lead free code features applications absolute maximum ratings (t a = 25 c unless otherwise noted) ? 25v/16a , r ds(on) = 7m ? (typ.) @ v gs = 4.5v ? ? ? ? ? super high dense advanced cell design for extremely low r ds(on) ? reliable and rugged ? sop-8 package ? power management in desktop computer or dc/dc converters. symbol parameter rating unit v dss drain-source voltage 25 v gss gate-source voltage 20 v i d * maximum drain current ? continuous 16 i dm maximum drain current ? pulsed 60 a * surface mounted on fr4 board, t 10 sec. ordering and marking information g s d n-channel mosfet pin description 1 2 3 45 6 7 8 s s s gd d d d so ? 8
copyright ? anpec electronics corp. rev. a.1 - aug., 2003 www.anpec.com.tw 2 apm4230 notes a : pulse test ; pulse width 300 s, duty cycle 2 % b : guaranteed by design, not subject to production testing apm4230 symbol parameter test condition min. typ. max. unit static bv dss drain-source breakdown voltage v gs =0v , i ds =250 a 25 v i dss zero gate voltage drain current v ds =20v , v gs =0v 1 a v gs(th) gate threshold voltage v ds =v gs , i ds =250 a 1 1.5 2 v i gss gate leakage current v gs = 20v , v ds =0v 100 na v gs =4.5v , i ds =16a 7 8 r ds(on) a drain-source on-state resistance v gs =4.5v , i ds =16a t j =125c , 10.5 12 m ? v sd a diode forward voltage i s =16a , v gs =0v 0.7 1.2 v dynamic b q g total gate charge 30 40 q gs gate-source charge 13 q gd gate-drain charge v ds =15v , i ds =16a v gs =4.5v , 10 nc t d(on) turn-on delay time 13 20 t r turn-on rise time 9 15 t d(off) turn-off delay time 43 66 t f turn-off fall time v dd =15v , i ds =1a , v gen =10v , r g =6 ? 14 28 ns c iss input capacitance 3000 c oss output capacitance 660 c rss reverse transfer capacitance v gs =0v v ds =15v fre q uenc y =1.0mhz 330 pf electrical characteristics (t a = 25 c unless otherwise noted) absolute maximum ratings (cont.) (t a = 25 c unless otherwise noted) symbol parameter rating unit t a =25 c 2.5 p d maximum power dissipation t a =100 c 1.0 w t j maximum junction temperature 150 c t stg storage temperature range -55 to 150 c r ja * thermal resistance ? junction to ambient 50 c/w
copyright ? anpec electronics corp. rev. a.1 - aug., 2003 www.anpec.com.tw 3 apm4230 012345 0 10 20 30 40 50 60 t j =125 o c t j =25 o c t j =-55 o c 0246810 0 10 20 30 40 50 60 v gs =2.5v v gs =2v v gs =3v v gs = 4,5,6,7,8,9,10v typical characteristics -50 -25 0 25 50 75 100 125 150 0.4 0.6 0.8 1.0 1.2 output characteristics v ds -drain-to-source voltage (v) i ds -drain current (a) transfer characteristics v gs -gate-to-source voltage (v) i ds -drain current (a) threshold voltage vs. junction temperature t j -junction temperature ( c) on-resistance vs. drain current i ds -drain current (a) r ds(on) -on-resistance ( ? ) i ds =250 a v gs(th)- threshold voltage (v) (normalized) 0 102030405060 0.004 0.005 0.006 0.007 0.008 0.009 v gs =4.5v
copyright ? anpec electronics corp. rev. a.1 - aug., 2003 www.anpec.com.tw 4 apm4230 0246810 0.000 0.004 0.008 0.012 0.016 0.020 i d = 16a 0 102030405060 0 2 4 6 8 10 v ds =10v i ds =16a typical characteristics (cont.) -50 -25 0 25 50 75 100 125 150 0.6 0.8 1.0 1.2 1.4 1.6 on-resistance vs. gate-to-source voltage on-resistaence vs. junction temperature r ds(on) -on resistance ( ? ) (normalized) r ds (on) -on-resistance ( ? ) v gs -gate-to-source voltage (v) t j -junction temperature ( c) gate charge q g -total gate charge (nc) v gs -gate-to-source voltage (v) v gs =4.5v i ds =16a 0 5 10 15 20 25 0 1000 2000 3000 4000 5000 frequency=1mhz crss coss ciss capacitance v ds -drain-to-source voltage (v) capacitance (pf)
copyright ? anpec electronics corp. rev. a.1 - aug., 2003 www.anpec.com.tw 5 apm4230 1e-4 1e-3 0.01 0.1 1 10 30 0.01 0.1 1 2 0.01 0.1 1 10 30 0 20 40 60 80 0.0 0.3 0.6 0.9 1.2 1.5 0.1 1 10 16 t j =125 o c t j =25 o c t j =-55 o c source-drain diode forward voltage i s -source current (a) v sd -source-to-drain voltage (v) typical characteristics (cont.) time (sec) single pulse power power (w) normalized transient thermal transient impedence, junction to ambient duty cycle=0.5 d=0.2 d=0.1 d=0.05 d=0.02 d=0.01 single pulse 1. duty cycle , d=t1/t2 2. per unit base=r thja =50 c/w 3. t jm -t a =p dm z thja 4. surface mounted square wave pulse duration (sec) normalized effective transient thermal impedance
copyright ? anpec electronics corp. rev. a.1 - aug., 2003 www.anpec.com.tw 6 apm4230 package informaion sop-8 pin ( reference jedec registration ms-012) h e e1 e2 0.015x45 d a a1 0.004max. 1 l millimeters inches dim min. max. min. max. a 1.35 1.75 0.053 0.069 a1 0.10 0.25 0.004 0.010 d 4.80 5.00 0.189 0.197 e 3.80 4.00 0.150 0.157 h 5.80 6.20 0.228 0.244 l 0.40 1.27 0.016 0.050 e1 0.33 0.51 0.013 0.020 e2 1.27bsc 0.50bsc 18 8
copyright ? anpec electronics corp. rev. a.1 - aug., 2003 www.anpec.com.tw 7 apm4230 reference jedec standard j-std-020a april 1999 reflow condition (ir/convection or vpr reflow) physical specifications pre-heat temperature 183 c peak temperature time temperature convection or ir/ convection vpr average ramp-up rate(183 c to peak) 3 c/second max. 10 c /second max. preheat temperature 125 25 c) 120 seconds max. temperature maintained above 183 c 60 ~ 150 seconds time within 5 c of actual peak temperature 10 ~ 20 seconds 60 seconds peak temperature range 220 +5/-0 c or 235 +5/-0 c 215~ 219 c or 235 +5/-0 c ramp-down rate 6 c /second max. 10 c /second max. time 25 c to peak temperature 6 minutes max. pkg. thickness 2.5mm and all bags pkg. thickness < 2.5mm and pkg. volume 350 mm pkg. thickness < 2.5mm and pkg. volume < convection 220 +5/-0 c convection 235 +5/-0 c vpr 215-219 c vpr 235 +5/-0 c ir/convection 220 +5/-0 c ir/convection 235 +5/-0 c classification reflow profiles package reflow conditions terminal material solder-plated copper (solder material : 90/10 or 63/37 snpb) lead solderability meets eia specification rsi86-91, ansi/j-std-002 category 3.
copyright ? anpec electronics corp. rev. a.1 - aug., 2003 www.anpec.com.tw 8 apm4230 application a b c j t1 t2 w p e 330 3 100 2 13 0. 5 2 0.5 16.4 +0.3 -0.2 2.5 0.5 16 + 0.3 16 - 0.1 8 0.1 1.75 0.1 f d d1 po p1 ao bo ko t to-252 7.5 0.1 1.5 0.1 1.5+ 0.25 4.0 0.1 2.0 0.1 6.8 0.1 10.4 0.1 2.5 0.1 0.3 0.05 (mm) a j b t2 t1 c t ao e w po p ko bo d1 d f p1 carrier tape & reel dimension test item method description solderability mil-std-883d-2003 245c,5 sec holt mil-std 883d-1005.7 1000 hrs bias @ 125c pct jesd-22-b, a102 168 hrs, 100% rh, 121c tst mil-std 883d-1011.9 -65c ~ 150c, 200 cycles reliability test program
copyright ? anpec electronics corp. rev. a.1 - aug., 2003 www.anpec.com.tw 9 apm4230 cover tape dimensions customer service anpec electronics corp. head office : 5f, no. 2 li-hsin road, sbip, hsin-chu, taiwan, r.o.c. tel : 886-3-5642000 fax : 886-3-5642050 taipei branch : 7f, no. 137, lane 235, pac chiao rd., hsin tien city, taipei hsien, taiwan, r. o. c. tel : 886-2-89191368 fax : 886-2-89191369 application carrier width cover tape width devices per reel to- 252 16 13.3 2500
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